Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2010-05-06
2011-11-01
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S686000, C257S690000, C257S692000, C257S700000, C257S723000
Reexamination Certificate
active
08049328
ABSTRACT:
A semiconductor device has a first interconnect structure formed over a first side of a substrate. A semiconductor die is mounted to the first interconnect structure. An encapsulant is deposited over the semiconductor die and first interconnect structure for structural support. A portion of a second side of the substrate, opposite the first side of the substrate, is removed to reduce its thickness. The encapsulant maintains substrate robustness during thinning process. A TSV is formed through the second side of the substrate to the first interconnect structure. A second interconnect structure is formed in the TSV. The TSV has a first insulating layer formed over the second side of the substrate and first conductive layer formed over the first insulating layer and into the TSV. The second interconnect structure has a second conductive layer formed over the first conductive layer in an area away from the TSV.
REFERENCES:
patent: 6002169 (1999-12-01), Chia et al.
patent: 2003/0136577 (2003-07-01), Abe
patent: 2004/0229398 (2004-11-01), Magerlein et al.
patent: 2007/0077747 (2007-04-01), Heck et al.
Heng Kock Liang
Marimuthu Pandi C.
Suthiwongsunthorn Nathapong
Atkins Robert D.
Lee Kyoung
Patent Law Group
Richards N Drew
STATS ChipPAC Ltd.
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