Semiconductor device and method of fabrication thereof

Details Semiconductor device and method of fabrication thereof Semiconductor device and method of fabrication thereof

2010-10-29

2011-10-18

Smith, Zandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S258000, C438S259000, C438S288000, C257SE21442

Reexamination Certificate

active

08039336

ABSTRACT:
A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer and the trench isolation; and in the step of depositing the first silicon layer the first silicon layer is an undoped silicon layer and in the step of depositing the second silicon layer the second silicon layer is a doped silicon layer or an undoped silicon layer subsequently having an impurity introduced thereinto or the like and thermally diffused through subsequent thermal hysteresis into the first silicon layer.

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