Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2011-01-11

2011-01-11

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S391000

Reexamination Certificate

active

07867840

ABSTRACT:
In a semiconductor substrate in a first section, a channel region having an impurity concentration peak in an interior of the semiconductor substrate is formed, and in the semiconductor substrate in a second section and a third section, channel regions having an impurity concentration peak at a position close to a surface of the substrate are formed. Then, extension regions are formed in the first section, the second section and the third section. After that, the substrate is thermally treated to eliminate defects produced in the extension regions. Then, using gate electrodes and side-wall spacers as a mask, source/drain regions are formed in the first section, the second section and the third section.

REFERENCES:
patent: 5773863 (1998-06-01), Burr et al.
patent: 6753231 (2004-06-01), Ikeda et al.
patent: 7190050 (2007-03-01), King et al.
patent: 7521765 (2009-04-01), Tsutsumi et al.
patent: 7772655 (2010-08-01), Akamatsu et al.
patent: 05-335564 (1993-12-01), None
patent: 2002-368212 (2002-12-01), None

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