Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2011-01-04

2011-01-04

Mulpuri, Savitri (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S578000, C438S586000, C438S587000, C257SE21555, C257SE21621, C257SE21624, C257SE21635, C257SE21638, C257SE27060, C257SE21177, C257SE21653, C257SE39005, C257SE33005, C257SE33065

Reexamination Certificate

active

07863677

ABSTRACT:
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a plurality of active regions which are defined in a semiconductor substrate, a plurality of gate lines which are formed as zigzag lines, extend across the active regions, are symmetrically arranged, and define a plurality of first regions and a plurality of second regions therebetween, and wherein the first regions being narrower than the second regions. The semiconductor device further includes an insulation layer which defines a plurality of contact regions by filling empty spaces in the first regions between the gate lines and, extending from the first regions, and surrounding sidewalls of portions of the gate lines in the second regions, and wherein the contact regions partially exposing the active regions and a plurality of contacts which respectively fill the contact regions.

REFERENCES:
patent: 6255170 (2001-07-01), Yu
patent: 03-274760 (1991-12-01), None
patent: 05-326886 (1993-12-01), None
patent: 100135695 (1998-01-01), None
patent: 1020050065849 (2005-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2686666