Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2011-08-23

2011-08-23

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S300000, C257S379000, C257S532000, C257SE29034, C257SE29345

Reexamination Certificate

active

08004023

ABSTRACT:
A semiconductor device having a semiconductor substrate including a first region and a second region is provided. The semiconductor device further includes a gate electrode on the first region and having a first sidewall and a second sidewall, a first source region in the first region proximate to the first sidewall, a first drain region in the first region proximate to the second sidewall, an upper electrode on the second region and having a first sidewall and a second sidewall, a second source region in the second region proximate to the first sidewall of the upper electrode, and a second drain region in the second region proximate to the second sidewall of the upper electrode, wherein an impurity doping concentration of the first source region and the first drain region is greater than an impurity doping concentration of the second source region and the second drain region.

REFERENCES:
patent: 4994404 (1991-02-01), Sheng et al.
patent: 5989967 (1999-11-01), Gardner et al.
patent: 6066881 (2000-05-01), Shimizu et al.
patent: 6252281 (2001-06-01), Yamamoto et al.
patent: 6344692 (2002-02-01), Ikemasu et al.
patent: 2001/0005610 (2001-06-01), Fukase et al.
patent: 2003/0015746 (2003-01-01), Ida et al.
patent: 94-16921 (1996-01-01), None
patent: 1999-0077754 (1999-10-01), None
patent: 10244413 (2000-02-01), None
patent: 10-2005-0066688 (2005-06-01), None
patent: 10-2005-0101030 (2005-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2681729