Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-19
2011-07-19
Such, Matthew W (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S396000, C257SE29343
Reexamination Certificate
active
07982254
ABSTRACT:
A protective film (56) having a water/hydrogen blocking function is formed so as to cover the periphery of a pad electrode (54a) while being electrically isolated from the pad electrode. A material selected in the embodiment for composing the protective film is a highly moisture-proof material having a water/hydrogen blocking function considerably superior to that of the insulating material, such as palladium (Pd) or palladium-containing material, and iridium (Ir) or iridium oxide (IrOx: typically x=2) or an iridium- or iridium oxide-containing material. An FeRAM capable of reliably preventing water/hydrogen from entering inside, and of maintaining high performance of the ferroelectric capacitor structure (30) may be realized only by a simple configuration.
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Asai Kazuhiro
Kudou Masahito
Miyazaki Yukimasa
Nagai Kouichi
Saigoh Kaoru
Fujitsu Patent Center
Fujitsu Semiconductor Limited
Naraghi Ali
Such Matthew W
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