Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-19
2011-04-19
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S424000
Reexamination Certificate
active
07928495
ABSTRACT:
A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
REFERENCES:
patent: 2005/0110071 (2005-05-01), Ema et al.
Kim Jung-Hwan
Kim Tae-hyun
Kim Yong-Seok
Leam Hun-Hyeoung
Nam Seok-Woo
F. Chau & Associates LLC
Le Thao P.
Samsung Electronics Co,. Ltd.
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