Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2011-03-15

2011-03-15

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S210000, C257SE21632

Reexamination Certificate

active

07906386

ABSTRACT:
A semiconductor device capable of preventing malfunction of a Schottky diode to reduce a failure ratio of the semiconductor device and a method for fabricating the same are disclosed. The semiconductor device includes first and second CMOS switching devices formed over a silicon substrate, a Schottky diode formed in a Schottky diode region, and a Schottky diode isolation film surrounding the Schottky diode region and isolating the Schottky diode from the silicon substrate.

REFERENCES:
patent: 2005/0139753 (2005-06-01), Park et al.

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