Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2010-07-19

2011-12-06

Pizarro Crespo, Marcos D (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S303000, C438S151000

Reexamination Certificate

active

08071469

ABSTRACT:
A semiconductor device having increased reliability includes a fuse region and a monitoring region. Fuses are located on an insulation film in the fuse region and are exposed through fuse windows. A monitoring pattern is located on the insulation film in the monitoring region. The monitoring pattern includes sub-patterns that are exposed through a monitoring window.

REFERENCES:
patent: 6180503 (2001-01-01), Tzeng et al.
patent: 6372554 (2002-04-01), Kawakita et al.
patent: 6586815 (2003-07-01), Ohhashi
patent: 6822309 (2004-11-01), Hirota
patent: 10-135340 (1998-05-01), None
patent: 2001-257264 (2001-09-01), None
patent: 2002-359285 (2002-12-01), None
patent: 2006-066500 (2006-03-01), None
patent: 1020010065329 (2001-07-01), None

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