Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2008-12-23

2011-11-08

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C438S243000, C438S253000, C438S257000, C438S259000, C257SE21639

Reexamination Certificate

active

08053313

ABSTRACT:
In a method of fabricating a semiconductor device on a substrate having a pillar pattern, a gate electrode is formed on the pillar pattern without etching the latter. A conductive pattern is filled between adjacent pillar patterns, a spacer is formed above the conductive pattern and surrounding sidewalls of each pillar pattern, and the gate electrode is formed by etching the conductive pattern using the spacer as an etch barrier.

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