Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2009-12-29

2011-11-01

Sefer, A. (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S302000, C257SE27091, C257SE21646

Reexamination Certificate

active

08048737

ABSTRACT:
The invention relates to a semiconductor device and a method of fabricating the same, wherein a storage node contact hole is made large to solve any problem caused during etching a storage node contact hole with a small CD, a landing plug is formed to lower plug resistance, and the SAC process is eliminated at the time of the bit line formation. A method of fabricating a semiconductor device according to the invention comprises: forming a device isolation film for defining a multiplicity of active regions in a semiconductor substrate; forming a multiplicity of buried word lines in the semiconductor substrate; forming a storage node contact hole for exposing a storage node contact region of two adjoining active regions; filling the storage node contact hole with a storage node contact plug material; forming a bit-line groove for exposing a bit-line contact region of the active region and splitting the storage node contact plug material into two; and burying the bit line into the bit-line groove.

REFERENCES:
patent: 5398205 (1995-03-01), Yamaguchi
patent: 6720606 (2004-04-01), Nitayama et al.
patent: 7034408 (2006-04-01), Schloesser
patent: 2002/0195680 (2002-12-01), Son
patent: 2004/0224476 (2004-11-01), Yamada et al.
patent: 2007/0267676 (2007-11-01), Kim et al.
patent: 2008/0017904 (2008-01-01), Akiyama et al.
patent: 2008/0284029 (2008-11-01), Kim et al.
patent: 2011/0070716 (2011-03-01), Kim
patent: 20040069515 (2004-08-01), None
patent: 20040079518 (2004-09-01), None

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