Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2007-09-24

2010-11-16

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S755000, C257SE23141, C257SE21495

Reexamination Certificate

active

07833902

ABSTRACT:
In a semiconductor device and a method of fabricating the same, the semiconductor device includes a contact pad in a first interlayer insulating layer on a semiconductor substrate, a contact hole in a second interlayer insulating layer on the first interlayer insulating layer, selectively exposing the contact pad, a contact spacer on internal walls of the contact hole, a first contact plug connected to the contact pad exposed by the contact hole having the contact spacer on the internal walls thereof, the first contact plug partially filling the contact hole, a metal silicide layer on a surface of the first contact plug, and a second contact plug on the metal silicide layer and partially filling the remaining portion of the contact hole.

REFERENCES:
patent: 6489197 (2002-12-01), Uchiyama
patent: 7297998 (2007-11-01), Kim et al.
patent: 2005/0202630 (2005-09-01), Tran
patent: 2006/0202340 (2006-09-01), Park et al.
patent: 2006/0205141 (2006-09-01), Park et al.
patent: 2001-257325 (2001-09-01), None
patent: 1020010058958 (2001-07-01), None
patent: 1020030046135 (2003-06-01), None
patent: 10-2004-0067315 (2004-07-01), None
patent: 1020050012956 (2005-02-01), None
patent: 10-2005-0101037 (2005-12-01), None

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