Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2007-04-06

2010-06-01

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29273

Reexamination Certificate

active

07728381

ABSTRACT:
A semiconductor device is fabricating using a photoresist mask pattern, and selectively removing portions of a liner nitride layer in a cell region and a peripheral circuit region. A modified FinFET is formed to reduce the influence of signals transmitted by adjacent gate lines in a cell region. A double FinFET and a substantially planar MOSFET are formed in a core region and in a peripheral region, respectively, concurrently with the formation of the modified FinFET.

REFERENCES:
patent: 6815277 (2004-11-01), Fried et al.
patent: 6888187 (2005-05-01), Brown et al.
patent: 6888199 (2005-05-01), Nowak et al.
patent: 7396775 (2008-07-01), Lee
patent: 2005-019996 (2005-01-01), None
English language abstract of Japanese Publication No. 2005-019996.

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