Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2007-12-27

2009-12-29

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S661000, C257S757000, C257SE21593, C257SE21624, C257SE27010, C257SE27046

Reexamination Certificate

active

07638433

ABSTRACT:
A method of fabricating a semiconductor device includes forming a preliminary gate pattern on a semiconductor substrate. The preliminary gate pattern includes a gate oxide pattern, a conductive pattern, and a sacrificial insulating pattern. The method further includes forming spacers on opposite sidewalls of the preliminary gate pattern, forming an interlayer dielectric pattern to expose the sacrificial insulating pattern, removing the sacrificial insulating pattern to form an opening to expose the conductive pattern, transforming the conductive pattern into a metal silicide layer and forming a metal barrier pattern along an inner profile of the opening and a metal conductive pattern to fill the opening including the metal barrier pattern. The metal silicide layer and the metal conductive pattern constitute a gate electrode.

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English Abstract Publication No. 1020040001861, Jan. 7, 2004.

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