Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2005-07-15

2009-11-03

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S350000, C257S347000, C257S351000

Reexamination Certificate

active

07611934

ABSTRACT:
A semiconductor device includes (a) a semiconductor layer formed on an electrically insulating layer, (b) a gate insulating film formed on the semiconductor layer, (c) a gate electrode formed on the gate insulating film, and (d) a field insulating film formed on the semiconductor layer for defining a region in which a semiconductor device is to be fabricated. The semiconductor layer includes (a1) source and drain regions formed in the semiconductor layer around the gate electrode, the source and drain regions containing first electrically conductive type impurity, (a2) a body contact region formed in the semiconductor layer, the body contact region containing second electrically conductive type impurity, and (a3) a carrier path region formed in the semiconductor layer such that the carrier path region does not make contact with the source and drain regions, but makes contact with the body contact region, the carrier path region containing second electrically conductive type impurity.

REFERENCES:
patent: 6975001 (2005-12-01), Koh et al.
patent: H10-308516 (1998-11-01), None
patent: 2000-68519 (2000-03-01), None
patent: 2001-223360 (2001-08-01), None
patent: 2002-231956 (2002-08-01), None

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