Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

1997-07-30

1999-03-09

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438260, 438964, H01L 21336

Patent

active

058799788

ABSTRACT:
A method of making a semiconductor device includes forming a semiconductor substrate having an undulated surface, a gate insulating layer on the semiconductor substrate, a gate electrode on the gate insulating layer, and a source/drain impurity diffusion region in the substrate. The method of fabricating the semiconductor device includes the steps of forming an undulated surface on the substrate by using HSG (hemispherical grain), forming a gate insulating layer on the substrate, forming a gate electrode on the gate insulating layer, and forming an impurity region in the substrate.

REFERENCES:
patent: 5504022 (1996-04-01), Nakanishi et al.
patent: 5658381 (1997-08-01), Thakur et al.
C. Hu, et al., Hot-Electron-Induced MOSFET Degradation-Model, Monitor, and Improvement, IEEE Transactions on Electron Devices, vol. ED-32, No. 2, Feb. 1985, pp. 375-385.

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