Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2005-06-14
2005-06-14
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S781000, C257S782000, C257S738000, C257S751000
Reexamination Certificate
active
06906429
ABSTRACT:
A semiconductor device comprises a semiconductor IC chip provided with electrode pads, and an insulating layer formed on a surface of the semiconductor IC chip, on the side of the electrode pads. Connecting terminals on the outer surface of the insulating layer and the electrode pads are connected by conductive posts. The insulating layer is formed of an insulating elastic material, and the conductive posts are formed of a conductive elastic material.
REFERENCES:
patent: 5016087 (1991-05-01), Haug et al.
patent: 5023697 (1991-06-01), Tsumura
patent: 5045151 (1991-09-01), Edell
patent: 5229646 (1993-07-01), Tsumura
patent: 5430329 (1995-07-01), Harada et al.
patent: 5525839 (1996-06-01), Shu
patent: 5726500 (1998-03-01), Duboz et al.
patent: 5898223 (1999-04-01), Frye et al.
patent: 6147413 (2000-11-01), Farnworth
patent: 6441487 (2002-08-01), Elenius et al.
patent: 6492200 (2002-12-01), Park et al.
patent: 6559540 (2003-05-01), Kawashima
Clark Jasmine
Dai Nippon Printing Co. Ltd.
LandOfFree
Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3490187