Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2005-06-21

2005-06-21

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257S392000, C257S393000

Reexamination Certificate

active

06909135

ABSTRACT:
In the semiconductor storage device, a dummy P+ diffusion region which does not contribute to a storage operation is formed in the vicinity of two P+ diffusion regions constituting a storage node. Moreover, a dummy N+ diffusion region which does not contribute to the storage operation is formed in the vicinity of N+ diffusion regions FL210and FL220constituting a storage node. Consequently, a part of electrons generated in a P well region PW by irradiation of α rays or neutron rays can be collected into the dummy N+ diffusion region FL250, and a part of holes generated in an N well region NW by the irradiation of the α rays or the neutron rays can be collected into the dummy P+ diffusion region FL150.

REFERENCES:
patent: 6642588 (2003-11-01), Porter et al.
patent: 59-084461 (1984-05-01), None
patent: 62-8559 (1987-01-01), None
patent: 62-85460 (1987-04-01), None
patent: 2589949 (1996-12-01), None
patent: 1999-017330 (1999-03-01), None
U.S. Appl. No. 09/900,917, filed Jul. 10, 2001.

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