Semiconductor device and method of dual-molding die formed...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

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C257SE21705, C257SE23070

Reexamination Certificate

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08039304

ABSTRACT:
A semiconductor device has dual-molded semiconductor die mounted to opposite sides of a build-up interconnect structure. A first semiconductor die is mounted to a temporary carrier. A first encapsulant is deposited over the first semiconductor die and temporary carrier. The temporary carrier is removed. A first interconnect structure is formed over a first surface of the first encapsulant and first semiconductor die. The first interconnect structure is electrically connected to first contact pads of the first semiconductor die. A plurality of conductive pillars is formed over the first interconnect structure. A second semiconductor die is mounted between the conductive pillars to the first interconnect structure. A second encapsulant is deposited over the second semiconductor die. A second interconnect structure is formed over the second encapsulant. The second interconnect structure is electrically connected to the conductive pillars and first and second semiconductor die.

REFERENCES:
patent: 5250843 (1993-10-01), Eichelberger
patent: 5353498 (1994-10-01), Fillion et al.
patent: 5841193 (1998-11-01), Eichelberger
patent: 7619901 (2009-11-01), Eichelberger et al.
patent: 2008/0239686 (2008-10-01), Negishi
patent: 2011/0104852 (2011-05-01), Ishino et al.
patent: 2011/0127672 (2011-06-01), Suh

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