Semiconductor device and method for production thereof

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S309000, C438S362000, C257S565000, C257SE21379, C257SE29034, C257SE29185

Reexamination Certificate

active

07323390

ABSTRACT:
The semiconductor device according to the invention includes a substrate, a field insulating region which delimits an active region of the semiconductor substrate, a collector, at least one collector contact region associated with the collector, and a base with an associated base connection region. The collector and the collector contact region are formed in the same active region. In addition the base connection region extends partially over the active region and is separated from the surface of the active region by an insulator layer.

REFERENCES:
patent: 4381953 (1983-05-01), Ho et al.
patent: 5321301 (1994-06-01), Sato
patent: 5358882 (1994-10-01), Bertagnolli et al.
patent: 5374846 (1994-12-01), Takemura
patent: 5500554 (1996-03-01), Sato
patent: 5571731 (1996-11-01), Grützediek et al.
patent: 5656514 (1997-08-01), Ahlgren et al.
patent: 5925923 (1999-07-01), Blair
patent: 5950080 (1999-09-01), Yoshida
patent: 6171894 (2001-01-01), Laurens
patent: 6198156 (2001-03-01), Johansson et al.
patent: 6426265 (2002-07-01), Chu et al.
patent: 6441437 (2002-08-01), Gossner
patent: 6627972 (2003-09-01), Ehwald et al.
patent: 2003/0020139 (2003-01-01), Stengl et al.
patent: 196 11 692 (1997-10-01), None
patent: 199 57 113 (2001-06-01), None
patent: 0 350 610 (1989-06-01), None
patent: 0 534 271 (1992-09-01), None
patent: 0 756 329 (1995-07-01), None
patent: 0 762 511 (1996-08-01), None
patent: 0 949 665 (1999-04-01), None
patent: 1 020 923 (2000-01-01), None
patent: WO/97/36328 (1997-10-01), None
patent: WO 98/09335 (1998-03-01), None
patent: WO 99/17369 (1999-04-01), None
Patent Specification, 1,127,161 filed Nov. 30, 1965, No. 50687/65, Application made in Germany (No. S94398 VIIIc/21g) on Dec. 1, 1964, Complete Specification Published: Sep. 11, 1968, Improvements in or relating to Diffused Ease Transistors.
The Proliferation of Silicon Germanium, A. Schüppen, et al., TEMIC Semiconductor GmbH an ATMEL Company, Theresienstrasse 2, 74072 Heilbronn.
IEEE IEDM 90-33, 30 GGGHz Polysilicon-Emitter and Single-Crystal-Emitter Graded SiGE-Base PNP Transistors, D.L. Harame, et al., IBM Research Division, Yorktown Heights, NY, IBM General Technology Division, Burlington, VT, CH2865-4/90/0000-0033 1990 IEEE.
Yih-Feng Chyan et al.,A 50-GHz 0.25 μm Implanted-Base High-Energy Implanted-Collector Complementary Modular BiCMOS(HEICBiC)Technology for Low-Power Wireless-Communication VLSIs, Bell Laboratories, Lucent Technologies, Orlando FL., 1998 IEEE BCTM 7.3 (pp. 128-131).
Yih-Feng Chyan et al.,A 50-GHz 0.25 μm High Energy Implanted BiCMOS(HEIBiC)Technology for Low-Power Wireless-High Integration Wireless-Communication Systems, Bell Laboratories, Lucent Technologies, Orlando, FL., 1998 Symposium on VLSI technology Digest of Technical Papers, 1998 IEEE (pp. 92-93).

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