Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2002-02-06
2004-03-30
Clark, Sheila V. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S784000, C257S781000
Reexamination Certificate
active
06713880
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device and a method for producing the same, and a method for mounting a semiconductor device. In particular, the present invention relates to a semiconductor device in the form of a chip that can increase the efficiency of mounting on a wiring substrate, allows high-density mounting, and can realize highly reliable substrate mounting, and a method for producing the same, and a method for mounting a semiconductor device. The present invention also relates to a semiconductor device in which electrode pads for external terminals are rewired on a semiconductor chip, and the external terminals are arranged two-dimensionally and a method for producing the same, and a method for mounting a semiconductor device.
In recent years, high-density mounting of a semiconductor package having a lead terminal as its external terminal has been promoted with the development of light-weighted, compact and high-density portable equipment. Under these circumstances, for higher density mounting, a technique for mounting a semiconductor device in the form of a chip on a wiring substrate of electronic equipment has been developed.
Hereinafter, a conventional semiconductor device that is mounted on a wiring substrate and a method for mounting a semiconductor will be described with reference to the accompanying drawings.
FIG. 9
schematically shows a cross-sectional structure of a conventional semiconductor device, and the semiconductor device shown in
FIG. 9
is a semiconductor device in the form of a chip used for bare chip mounting. The semiconductor device includes a semiconductor chip
1
including a semiconductor integrated circuit inside its upper surface, and electrode pads (not shown) electrically connected to the semiconductor integrated circuit are provided on the semiconductor chip
1
. Protruded electrodes
2
are formed on the electrode pads (not shown).
The protruded electrodes
2
are formed in the peripheral portion of the semiconductor chip
1
to constitute external terminals for electrical connection to the outside. The protruded electrodes
2
are made of conductive metal protrusion such as bumps and solder balls. Although not shown, an insulating layer is formed on a region excluding the electrode pads on the upper surface of the semiconductor chip
1
.
Next, referring to
FIGS. 10A
to
10
C, a conventional method for mounting a semiconductor device will be described.
To mount the semiconductor device as shown in
FIG. 9
on a wiring substrate, first, a wiring substrate
3
such as a printed substrate to be incorporated into electronic equipment is prepared. Then, as shown in
FIG. 10A
, wiring electrodes
4
for connection provided on the upper surface of the wiring substrate
3
are aligned with the protruded electrodes
2
on the principal surface of the semiconductor chip
1
of the semiconductor device.
Then, as shown in
FIG. 10B
, the wiring electrodes
4
on the wiring substrate
3
are connected to the protruded electrodes
2
on the semiconductor device. In this case, when the protruded electrodes
2
are solder balls, the solder balls are joined to the wiring electrodes
4
on the wiring substrate
3
while the solder balls are melted.
Thereafter, as shown in
FIG. 10C
, the gap between the semiconductor chip
1
of the semiconductor device and the wiring substrate
3
is filled and sealed with an underfill material
5
such as an insulating resin while the protruded electrodes
2
of the semiconductor device are connected to the wiring substrate
3
. Then, the underfill material
5
is cured to finish the substrate mounting.
FIGS. 11A
to
11
C show another mounting method. In this mounting method, an under filling material is first supplied onto a surface of a wiring substrate, and the semiconductor device is pressed onto the substrate in such a manner that the under filling material is sandwiched for connection. Hereinafter, this approach will be described more specifically.
First, as shown in
FIG. 11A
, the underfill material
5
as an insulative resin sheet having a desired thickness and area is attached onto the wiring electrodes
4
of the wiring substrate
3
such as a printed substrate to be incorporated into electronic equipment.
Then, as shown in
FIG. 11B
, the wiring electrodes
4
of the wiring substrate
3
are aligned with the protruded electrodes
2
of the semiconductor, and then the semiconductor device is pressed with its face down under heat and pressure in such a manner that the underfill material
5
as an insulating resin sheet supplied onto the surface of the wiring substrate
3
is sandwiched therebetween, so that the protruded electrodes
2
penetrate the underfill material
5
. Thus, the protruded electrodes
2
of the semiconductor chip
1
are connected to the wiring electrodes
4
.
Thereafter, as shown in
FIG. 11C
, the sheet-like underfill material
5
is cured to finish the substrate mounting.
As described above, in the conventional devices, the wiring electrodes on the wiring substrate are connected to the semiconductor device in the form of a chip used for bare chip mounting via the protruded electrodes, and the underfill material is formed in the gap therebetween to mount the semiconductor device, and thus the underfill material is formed by being supplied after or before the connection of the semiconductor device and the wiring electrodes.
The conventional semiconductor device has a structure where the protruded electrodes are provided on electrode pads disposed in the peripheral portion of a semiconductor chip, and the electrode pads are formed in the peripheral region outside the semiconductor integrated circuit element on the semiconductor chip. Therefore, the two-dimensional area arrangement of the electrode pads inside the chip surface cannot be achieved, so that there is a limit for higher density as a semiconductor device.
For this reason, recently, a semiconductor device has been under development in which electrode pads on the semiconductor chip are wired around (rewired), and contact pads connected to the electrode pads in a two-dimensional area are formed on the principal surface (on the semiconductor integrated circuit element) of the semiconductor chip. However, there are various limitations in order to connect such a semiconductor device (that is, a semiconductor device in which contact pads connected to electrode pads are formed on the semiconductor integrated circuit element region) and a wiring substrate.
For example, when performing substrate mounting by supplying a sheet-like or film-like underfill material onto a wiring substrate, and pressing protruded electrodes formed on the contact pads of the semiconductor device with the underfill material sandwiched therebetween, a pressure is applied to the semiconductor device. Consequently, this pressure causes damage to the semiconductor integrated circuit element below the contact pads of the semiconductor device, which imposes some limitations on how to mount it on a substrate. Furthermore, when connecting the wiring electrodes on the wiring substrate to the contact pads, and then filling and sealing the gap between them with an underfill material, voids may be generated in the underfill material.
Furthermore, in the conventional method for mounting a semiconductor device, it is necessary to fill or attach an underfill material to a wiring substrate for each semiconductor device to achieve substrate mounting, which causes a problem in terms of the mounting efficiency of substrate mounting. In addition, there is also an increase in the mounting cost due to the introduction of a new mounting facility with high precision for use in substrate mounting.
SUMMARY OF THE INVENTION
Therefore, with the foregoing in mind, it is a main object of the present invention to provide a semiconductor device and a mounting method that can improve the mounting efficiency of substrate mounting. It is another object of the present invention to provide a semiconductor device that can realize highly reliable subst
Fujimoto Hiroaki
Sahara Ryuichi
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