Semiconductor device and method for producing the same

Details Semiconductor device and method for producing the same Semiconductor device and method for producing the same

2006-10-10

2006-10-10

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S305000, C438S406000, C438S407000, C438S423000

Reexamination Certificate

active

07118978

ABSTRACT:
A method for producing a semiconductor device with an SOI substrate having a support substrate1and a semiconductor layer3that interpose a first insulating film2between them includes the following steps. An element region and an element-separation region4are formed in the semiconductor layer3. A gate insulating film5is formed on the semiconductor layer3. A gate electrode6is formed on the gate insulating film5. A second insulating film7is formed. The gate insulating film5is removed. First thickness adjustment is performed. Ion implantation introducing low concentration impurities is performed on the thickness-adjusted semiconductor layers3and8. A first sidewall portion7ais formed on the side surfaces of the gate electrode6. A second sidewall portion10ais formed on the side surfaces of the first sidewall portion7a.

REFERENCES:
patent: 3955181 (1976-05-01), Raymond, Jr.
patent: 5168072 (1992-12-01), Moslehi
patent: 5504031 (1996-04-01), Hsu et al.
patent: 5998248 (1999-12-01), Ma et al.
patent: 6051509 (2000-04-01), Tsuchiaki
patent: 6214679 (2001-04-01), Murthy et al.
patent: 6287924 (2001-09-01), Chao et al.
patent: 6303450 (2001-10-01), Park et al.
patent: 6391692 (2002-05-01), Nakamura
patent: 6429084 (2002-08-01), Park et al.
patent: 6812105 (2004-11-01), Dokumaci et al.
patent: 6821856 (2004-11-01), Takagi
patent: 6828630 (2004-12-01), Park et al.
patent: 2005/0136606 (2005-06-01), Rulke et al.
patent: 2005/0170604 (2005-08-01), Orlowski et al.
patent: 2001-068666 (2001-03-01), None

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