Semiconductor device and method for producing same

Details Semiconductor device and method for producing same Semiconductor device and method for producing same

1998-02-06

2000-12-26

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Die bond

257782, 257785, H01L 2348, H01L 2352

Patent

active

061664456

ABSTRACT:
A void-collection section is provided on a GaAs FET chip at a location that avoids a heat-generating region of the chip. Pressure is applied to the rear surface of the substrate corresponding to the heat-generating region of the chip, this causing the removal of a void from immediately under the heat-generating section, and the capture of the void by the void-collection section, thereby suppressing the localized rise in temperature of the chip caused by the existence of the void.

REFERENCES:
patent: 4104676 (1978-08-01), Bednorz et al.
patent: 5001542 (1991-03-01), Tsukagoshi et al.
patent: 5027189 (1991-06-01), Shannon et al.
patent: 5146308 (1992-09-01), Chance et al.

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