Semiconductor device and method for manufacturing thereof

Details Semiconductor device and method for manufacturing thereof Semiconductor device and method for manufacturing thereof

2011-07-19

2011-07-19

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S263000, C438S270000, C257SE21680, C257SE21422, C257SE21179

Reexamination Certificate

active

07981746

ABSTRACT:
The present invention provides a semiconductor device including a semiconductor substrate provided with a trench section; a tunnel insulating film covering an inner surface of the trench section; a trap layer provided in contact with the tunnel insulating film on an inner surface of an upper portion of the trench section; a top insulating film provided in contact with the trap layer; a gate electrode embedded in the trench section, and provided in contact with the tunnel insulating film at a lower portion of the trench section and in contact with the top insulating film at the upper portion of the trench section, in which the trap layer and the top insulating film, in between the lower portion of the trench section and the upper portion of the trench section, extend and protrude from both sides of the trench section so as to be embedded in the gate electrode, and a method for manufacturing thereof.

REFERENCES:
patent: 2009/0315098 (2009-12-01), Toyama et al.

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