Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-29
2011-03-29
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000, C257S302000, C257SE27057
Reexamination Certificate
active
07915113
ABSTRACT:
A method for manufacturing a semiconductor device including a vertical cell transistor structure may include forming a vertical cell transistor structure over a semiconductor substrate of a cell region; forming an insulating film over the vertical cell transistor structure; planarizing the insulating film to expose a hard mask film disposed at a top portion of the vertical cell transistor structure; and forming a storage node contact by removing the hard mask film.
REFERENCES:
patent: 2006/0097304 (2006-05-01), Yoon et al.
patent: 2007/0152255 (2007-07-01), Seo et al.
Kim Jin Soo
Lim Chang Moon
Hynix / Semiconductor Inc.
Kebede Brook
Marshall & Gerstein & Borun LLP
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