Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-09-16
2000-05-09
Thomas, Tom
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438257, 438266, 438279, 438283, 438286, 257365, 257369, 257512, 257563, H01L 218238, H01L 218228, H01L 21335, H01L 21336
Patent
active
060603461
ABSTRACT:
A semiconductor device and a method for manufacturing the same that forms a self-aligned contact hole between two gate lines. A substrate is provided that has a first gate line formed thereon. An insulator is formed on the first gate line and substrate. Then a portion of the insulator and a portion of the first gate line is selectively removed to split the first gate line into a second gate line and a third gate line and to concurrently expose the substrate. Thus, producing a self-aligned contact hole between the second and third gate lines.
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Roh Jae Sung
Yang Woun S
LG Semicon Co. Ltd.
Souw Bernard E.
Thomas Tom
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