Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2011-08-30

2011-08-30

Hoang, Quco D (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S216000, C257SE21190, C438S261000, C438S287000

Reexamination Certificate

active

08008147

ABSTRACT:
It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the semiconductor substrate and containing a metal, oxygen and an additive element; a gate electrode provided above the gate insulating film; and source/drain regions provided in the semiconductor substrate on both sides of the gate electrode. The additive element is at least one element selected from elements of Group 5, 6, 15, and 16 at a concentration of 0.003 atomic % or more but 3 atomic % or less.

REFERENCES:
patent: 4950620 (1990-08-01), Harrington, III
patent: 6563182 (2003-05-01), Horikawa
patent: 6875662 (2005-04-01), Iwasaki et al.
patent: 2005/0247985 (2005-11-01), Watanabe et al.
patent: 2006/0252193 (2006-11-01), Rabkin et al.
patent: 2002-280461 (2002-09-01), None
patent: 2004-031760 (2004-01-01), None
patent: 2004-103737 (2004-04-01), None
Notification of Reasons for Rejection issued by the Japanese Patent Office on Jul. 13, 2010, for Japanese Patent Application No. 2005-232979, and English-language translation thereof.

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