Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2008-02-14

2011-10-25

Coleman, William D (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21664, C438S396000

Reexamination Certificate

active

08044447

ABSTRACT:
There is provided a semiconductor device including a silicon substrate, a source/drain region formed in a surface layer of the silicon substrate, a first insulating film provided with a first hole on the first source/drain region, a conductive film formed on an inner surface of the first hole, a filler body, which is formed with a thickness to fill the first hole on the first conductive film, forms a first conduct plug together with the conductive film, and is formed of an insulating material with an upper surface being amorphous, and a capacitor, which is formed on the first contact plug and is provided with a lower electrode electrically connected to the conductive film, a capacitor dielectric film formed of a ferroelectric material, and an upper electrode.

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Chinese Office Action dated Aug. 4, 2010, issued in corresponding Chinese Patent Application No. 2005-800513196.
International Search Report of PCT/JP2005/014930, date of mailing Oct. 25, 2005.

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