Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2009-02-11

2010-10-19

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S774000, C438S914000, C257SE21006, C257SE21054, C257SE21170, C257SE21152, C257SE21248, C257SE21267, C257SE21278, C257SE21293, C257SE21311, C257SE21318, C257SE21304

Reexamination Certificate

active

07816279

ABSTRACT:
A semiconductor device includes a first conductor disposed on a semiconductor substrate; an oxygen-containing insulation film disposed on the semiconductor substrate and on the first conductor, the insulation film having a contact hole which extends to the first conductor and a trench which is connected to an upper portion of the contact hole; a zirconium oxide film disposed on a side surface of the contact hole and a side surface and a bottom surface of the trench; a zirconium film disposed on the zirconium oxide film inside the contact hole and inside the trench; and a second conductor composed of Cu embedded into the contact hole and into the trench.

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