Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2008-10-17

2010-11-02

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C257SE21205, C257SE21638, C257SE21635, C257SE21624

Reexamination Certificate

active

07824980

ABSTRACT:
A semiconductor device and a method for manufacturing the same includes forming a poly-gate including a first poly-gate portion and a second poly-gate portion on and/or over a semiconductor substrate, forming a trench having a predetermined depth in the poly-gate, implanting dopant ions into the entire surface of the semiconductor substrate and the poly-gate including the trench, forming a contact barrier layer to cover a portion of the poly-gate including the trench while exposing an upper surface of the remaining portion of the poly-gate on which a contact will be formed, and forming a contact on the exposed upper surface of the poly-gate.

REFERENCES:
patent: 6136675 (2000-10-01), Lee
patent: 6200840 (2001-03-01), Chen et al.
patent: 6635576 (2003-10-01), Liu et al.
patent: 2003/0008452 (2003-01-01), Takagi

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