Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-03-14

2009-10-13

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C257SE21453

Reexamination Certificate

active

07601599

ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of (a) forming a first insulating film pattern, which has a first portion and a second portion separated from the first portion through a first space, above a semiconductor substrate, (b) selectively forming a first impurity diffusion layer in a portion of the semiconductor substrate located at least below the first space by conducting ion implantation of impurities into the semiconductor substrate by using at least the first insulating film pattern as a mask, (c) eliminating the second portion, and (d) forming a gate electrode having a functional portion above the semiconductor substrate.

REFERENCES:
patent: 3959025 (1976-05-01), Polinsky
patent: 4731339 (1988-03-01), Ryan et al.
patent: 5571737 (1996-11-01), Sheu et al.
patent: 7056798 (2006-06-01), Shimotsusa et al.
patent: 7521759 (2009-04-01), Sasaki
patent: 2002/0190306 (2002-12-01), Sasago et al.
patent: 2003/0057460 (2003-03-01), Maekawa
patent: 2006/0205166 (2006-09-01), Ishikiriyama
patent: 2006/0214223 (2006-09-01), Sasaki
patent: 9/205205 (1997-08-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4135641