Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-05-16

2009-06-30

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S213000, C257S361000, C438S253000

Reexamination Certificate

active

07553722

ABSTRACT:
A semiconductor device includes: a semiconductor substrate having a first surface and a second surface, wherein the substrate has a first conductive type; a first trench extending from the first surface of the semiconductor substrate in a depth direction; and an epitaxial semiconductor layer having a second conductive type, wherein the epitaxial semiconductor layer is disposed in the first trench. The first trench includes an inner wall as an interface between the semiconductor substrate and the epitaxial semiconductor layer so that the interface provides a PN junction. The first trench has an aspect ratio equal to or larger than 1.

REFERENCES:
patent: 5751022 (1998-05-01), Yasuhara et al.
patent: 6365932 (2002-04-01), Kouno et al.
patent: 6525375 (2003-02-01), Yamaguchi et al.
patent: 6630389 (2003-10-01), Shibata et al.
patent: 6696323 (2004-02-01), Yamaguchi et al.
patent: 2003/0139012 (2003-07-01), Yamauchi et al.

Affiliated with

Also associated with

Rating

Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4053332