Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-01-08
2008-01-08
Tran, Long K. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S218000, C438S301000, C438S305000, C257S344000, C257SE21573, C257SE21581, C257SE21564
Reexamination Certificate
active
11317890
ABSTRACT:
A semiconductor device and a method for manufacturing the same are provided. A gate insulating film is formed under a vacuum condition to prevent deterioration of reliability of the device due to degradation of a gate insulating material and to have stable operating characteristics. The semiconductor device includes an element isolating film formed at element isolating regions of a semiconductor substrate, which is divided into active regions and the element isolating regions; a gate insulating film having openings with a designated width formed at the active regions of the semiconductor substrate; gate electrodes formed on the gate insulating film; and lightly doped drain regions and source/drain impurity regions formed in the surface of the semiconductor substrate at both sides of the gate electrodes.
REFERENCES:
patent: 6110790 (2000-08-01), Chen
patent: 6174754 (2001-01-01), Lee et al.
patent: 04357876 (1992-10-01), None
patent: 05243570 (1993-09-01), None
Dongbu Electronics Co. Ltd.
McKenna Long & Aldridge LLP
Tran Long K.
LandOfFree
Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3950489