Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-11-27
2007-11-27
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S295000, C438S221000, C438S222000, C257S347000, C257SE21619, C257SE21628
Reexamination Certificate
active
11293614
ABSTRACT:
A semiconductor device and a method for manufacturing the same are disclosed, in which an insulating layer may be formed in a strained silicon layer under source/drain regions to substantially overcome conventional problems resulting from a channel decrease in the semiconductor device. A method for manufacturing the semiconductor device may include growing a germanium layer on a first silicon layer; forming at least two trenches in the germanium layer; forming an insulating layer in the germanium layer including the trenches; forming at least two gate insulating layer patterns by polishing the germanium layer and the insulating layer to coplanarity in the bottom of the trenches; re-growing and planarizing the germanium layer; forming a second silicon layer on the germanium layer; forming a gate insulating layer and a gate electrode on the second silicon layer between the at least two insulating layers; and forming source/drain regions by implanting impurity ions into the second silicon layer at sides of the gate electrode.
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Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Fourson George
Parker John M
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