Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2007-01-02
2007-01-02
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S154000, C257S071000
Reexamination Certificate
active
10963822
ABSTRACT:
A semiconductor device that can be manufactured with a reduced cost by decreasing the number of masks is disclosed, and a method for manufacturing the semiconductor device is disclosed. The method for manufacturing the semiconductor device comprises the steps of: forming a semiconductor layer3having a source and a drain regions10, 11, and LDD regions16, 17; a gate insulating film5; and a gate electrode6; forming a first and a second interlayer insulating films24, 25over the gate electrode6and the gate insulating film5; forming contact holes25a,25cto these interlayer insulating films so as to be located over each of the source region and the drain region; and an opening portion25bto these interlayer insulating films so as to be located over the gate electrode and the LDD region; forming a second gate electrode26bby a conductive film in the opening portion so as to cover the gate electrode and the LDD region; and a pixel electrode26aover the second interlayer insulating film; removing the gate insulating film in the contact hole; and forming wirings27, 28connected to each the source region and the drain region.
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Arao Tatsuya
Kitakado Hidehito
Kyoho Masanori
Matsuo Takuya
Noda Takeshi
Lebentritt Michael
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Sharp Kabushiki Kaisha
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