Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-09-11
2007-09-11
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S216000, C438S240000, C438S281000, C257SE21193, C257SE21194
Reexamination Certificate
active
11357072
ABSTRACT:
A gate insulating film on a silicon substrate of includes a SiO2film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO2film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO2film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.
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Arikado Tsunetoshi
Kawahara Takaaki
Kitajima Hiroshi
Miyazaki Seiichi
Torii Kazuyoshi
Lebentritt Michael
Lee Kyoung
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