Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-19
2006-12-19
Doan, Theresa T. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S301000
Reexamination Certificate
active
07151034
ABSTRACT:
The present invention discloses improved semiconductor device and method for manufacturing wherein one side of a source and drain region and a portion of a channel region are disposed on a buried oxide layer formed on a semiconductor substrate and the side of the source and drain region and another portion of the channel region are disposed on a Si epitaxial layer formed on a semiconductor substrate.
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Malgorzata Jurczak et al., “Silicon-on-Nothing (SON)-an Innovative Process for Advanced CMOS”, IEEE, Nov. 2000, pp. 2179-2187, vol. 47, No. 11.
Ahn Jin Hong
Kim Yil Wook
Lee Sang Don
Doan Theresa T.
Heller Ehrman LLP
Hynix / Semiconductor Inc.
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