Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-12-19

2006-12-19

Doan, Theresa T. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000

Reexamination Certificate

active

07151034

ABSTRACT:
The present invention discloses improved semiconductor device and method for manufacturing wherein one side of a source and drain region and a portion of a channel region are disposed on a buried oxide layer formed on a semiconductor substrate and the side of the source and drain region and another portion of the channel region are disposed on a Si epitaxial layer formed on a semiconductor substrate.

REFERENCES:
patent: 6518134 (2003-02-01), Yang et al.
patent: 6713356 (2004-03-01), Skotnicki et al.
patent: 2006/0035417 (2006-02-01), Lee
patent: 0 535 814 (1993-04-01), None
patent: 1 039 546 (2000-09-01), None
patent: 2 838 237 (2003-10-01), None
patent: 1020010045 580 (2001-06-01), None
patent: 1020040049 658 (2004-06-01), None
Malgorzata Jurczak et al., “Silicon-on-Nothing (SON)-an Innovative Process for Advanced CMOS”, IEEE, Nov. 2000, pp. 2179-2187, vol. 47, No. 11.

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