Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2005-03-08

2005-03-08

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S268000

Reexamination Certificate

active

06864532

ABSTRACT:
A trench-gate type transistor has a gate insulating film formed on an inner wall of a trench. The gate insulating film includes a first portion located on a wall of the trench and a second portion located on upper and bottom portions of the trench. The first portion includes a first oxide film, a nitride film, and a second oxide film. The second portion includes only an oxide film and is thicker than the first portion. Accordingly, electric field concentration on upper and lower corner portions of the trench can be reduced to improve the withstand voltage. In addition, and end of the trench may have an insulation layer that is thicker than the first portion.

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