Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-20
2005-09-20
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S239000, C438S381000
Reexamination Certificate
active
06946342
ABSTRACT:
A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer can be densified. As a result, the electrical characteristics of the semiconductor device are improved. For example, the leakage current characteristics of the dielectric layer are improved and capacitance is increased.
REFERENCES:
patent: 5440157 (1995-08-01), Imai et al.
patent: 5641702 (1997-06-01), Imai et al.
patent: 6211033 (2001-04-01), Sandhu et al.
patent: 6287965 (2001-09-01), Kang et al.
patent: 6399491 (2002-06-01), Jeon et al.
patent: 6423629 (2002-07-01), Ahn et al.
patent: 6596583 (2003-07-01), Agarwal et al.
patent: 6599794 (2003-07-01), Kiyotoshi et al.
patent: 6635561 (2003-10-01), Kawai et al.
patent: 6660631 (2003-12-01), Marsh
patent: 6660660 (2003-12-01), Haukka et al.
patent: 6828190 (2004-12-01), Lee et al.
patent: 2001/0024387 (2001-09-01), Raaijmakers et al.
patent: 2002/0115252 (2002-08-01), Haukka et al.
patent: P2001-0082118 (2001-08-01), None
patent: P2002-0002596 (2002-01-01), None
patent: P2002-0034520 (2002-05-01), None
English Language Abstract of Korean Publication No: P2002-0002596.
English Language Abstract of Korean Publication No: P2002-0034520.
English Language Abstract of Korean Publication No: P2001-0082118.
Im Ki-Vin
Kim Sung-Tae
Kim Young-Sun
Lee Yun-Jung
Park In-Sung
Marger & Johnson & McCollom, P.C.
Nhu David
LandOfFree
Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3411349