Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2008-03-11
2008-03-11
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C257SE21623, C257SE21637
Reexamination Certificate
active
07341900
ABSTRACT:
A semiconductor device according to an embodiment of the present invention has a gate electrode which is formed on a semiconductor substrate via a gate insulating film, and which has a slit portion; side wall films formed at both side faces of the gate electrode and at side walls of the slit portion, and which fill an interior of the slit portion and cover the gate insulating film directly beneath the slit portion; and an interlayer insulating film formed to cover the gate electrode and the side wall films.
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S. Wolf, “Silicon Processing for the VLSI Era, vol. 2: Process Integration,” Lattice Press, Sunset Beach, CA ( 90), pp. 143-147, 273.
Aida Satoshi
Izumisawa Masaru
Kouzuki Shigeo
Nakayama Kazuya
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Sarkar Asok Kumar
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