Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-04-05
2011-04-05
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21444
Reexamination Certificate
active
07919375
ABSTRACT:
A semiconductor device and a method for manufacturing the device capable of preventing an LDD region and a lower portion of the gate electrode from overlapping each other to achieve desirable device performance are disclosed. Embodiments relate to a semiconductor device and a method for manufacturing the device that may minimize overlap between an LDD region and a lower portion of the gate electrode. Minimizing overlap may maximize device performance and minimize the generation of defects between gate electrodes.
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Dongbu Hi-Tek Co., Ltd.
Kim Sun M
Landau Matthew C
Sherr & Vaughn, PLLC
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