Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2006-10-24

2006-10-24

Malsawma, Lex H. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07125765

ABSTRACT:
A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)OY(0.05≦X≦0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM (Metal Insulator Metal) structure, dielectric breakdown of a capacitor insulating film while a relative dielectric constant of a metal oxide film used as the capacitor insulating film is kept high.

REFERENCES:
patent: 5471364 (1995-11-01), Summerfelt et al.
patent: 6407435 (2002-06-01), Ma et al.
patent: 2002/0153579 (2002-10-01), Yamamoto
patent: 2002/0163025 (2002-11-01), Vaartstra et al.
patent: 2004/0072401 (2004-04-01), Iizuka et al.
patent: H11-233726 (1999-08-01), None
patent: 2002-222934 (2002-08-01), None

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