Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-15
2011-03-15
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C257S368000, C257S492000, C257S493000, C257SE21483, C257SE29001
Reexamination Certificate
active
07906388
ABSTRACT:
A semiconductor device is formed by forming a second trench120at the base of a first trench18, depositing insulator124at the base of the second trench120, and then etching cavities26laterally from the sidewalls of the second trench, but not the base which is protected by insulator124. The invention may in particular be used to form semiconductor devices with cavities under the active components, or by filling the cavities to form silicon on insulator or silicon on conductor devices.
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Nguyen Thanh
NXP B.V.
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