Semiconductor device and method for making the same

Details Semiconductor device and method for making the same Semiconductor device and method for making the same

2011-03-22

2011-03-22

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE29131, C257SE29257, C257S330000

Reexamination Certificate

active

07910440

ABSTRACT:
A semiconductor device includes: a first trench that is formed in a semiconductor substrate; a gate oxide film that is formed on a surface of the first trench; and a trench gate electrode that is formed so as to bury the first trench via the gate oxide film. The semiconductor device also includes: a second trench that is formed in the semiconductor substrate with a width wider than the width of the first trench; and a terminal-embedded insulation layer that is formed so as to bury the second trench. The semiconductor device further includes: a third trench that is formed in the semiconductor substrate with a width wider than the width of the second trench; and a trench contact electrode that is formed so as to bury the third trench.

REFERENCES:
patent: 6621107 (2003-09-01), Blanchard et al.
patent: 6750511 (2004-06-01), Kawano et al.
patent: 6818947 (2004-11-01), Grebs et al.
patent: 6919249 (2005-07-01), Kawano et al.
patent: 2004/0171271 (2004-09-01), Heo et al.
patent: 2003-92405 (2003-03-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method for making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for making the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2777295