Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-16
2009-02-10
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S278000, C438S289000, C438S290000, C438S526000, C438S531000, C257SE21618, C257SE21443
Reexamination Certificate
active
07488653
ABSTRACT:
A semiconductor device includes a substrate of a first type of conductivity provided with at least one gate on one of its faces, and at least two doped regions of a second type of conductivity for forming a drain region and a source region. The two doped regions are arranged in the substrate flush with the face of the substrate on each side of a region of the substrate located under the gate for forming a channel between the drain and source regions. At least one region of doping agents of the second type of conductivity is implanted only in the channel.
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Del Medico Sylvie
Menut Olivier
Planes Nicolas
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Fourson George
Jorgenson Lisa K.
STMicroelectronics (Crolles 2) SAS
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