Semiconductor device and method for forming the same

Details Semiconductor device and method for forming the same Semiconductor device and method for forming the same

2011-03-29

2011-03-29

Such, Matthew W (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S260000, C257SE29300, C257SE21422

Reexamination Certificate

active

07915668

ABSTRACT:
A memory device includes an insulating layer formed over a substrate, a gate formed over the insulating layer, and charge storage elements disposed over the insulating layer. The charge storage elements are separated from each other and are electrically insulated, and each of the charge storage elements is capable of storing at least one charge. The charge storage elements can include fullerenes.

REFERENCES:
patent: 5952692 (1999-09-01), Nakazato et al.
patent: 5997958 (1999-12-01), Sato et al.
patent: 6342716 (2002-01-01), Morita et al.
patent: 6690059 (2004-02-01), Lojek
patent: 7262991 (2007-08-01), Zhang et al.
patent: 7482619 (2009-01-01), Seol et al.
patent: 2003/0011036 (2003-01-01), Bethune et al.
patent: 2003/0012723 (2003-01-01), Clarke
patent: 2003/0111670 (2003-06-01), Misra et al.
patent: 2003/0218927 (2003-11-01), Mayer et al.
patent: 2005/0062097 (2005-03-01), Misra et al.
patent: 2005/0072989 (2005-04-01), Bawendi et al.
patent: 2005/0201149 (2005-09-01), Duan et al.
patent: 2006/0212976 (2006-09-01), Khang et al.
patent: 2008/0191265 (2008-08-01), Mao et al.
patent: 10-2005-0053626 (2005-06-01), None
patent: 10-2005-0122683 (2005-12-01), None
patent: 10-0550452 (2006-02-01), None
patent: 10-2006-0093384 (2006-08-01), None
patent: WO 2007015010 (2007-02-01), None
Ganguly, U., et al. “Integration of Fullerenes and Carbon Nanotubes With Aggressively Scaled CMOS Gate Stacks.” Mat. Res. Soc. Symp. Proc., vol. 789 (2004): pp. N16.3.1-N16.3.6.
Jung, M.S., et al. “Patterning of Single-Wall Carbon Nanotubes via a Combined Technique (Chemical Anchoring and Photolithography) on Patterned Substrates.” J. Phys. Chem. B, vol. 109 (2005): pp. 10584-10589.
Stevens, J.L., et al. “Sidewall Amino-Functionalization of Single-Walled Carbon Nanotubes through Fluorination and Subsequent Reactions with Terminal Diamines.” NANOLETT., vol. 3 (2003): pp. 331-336.

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