Semiconductor device and method for forming same

Details Semiconductor device and method for forming same Semiconductor device and method for forming same

2007-07-30

2010-06-29

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S526000, C438S192000, C257SE21447, C257SE21445

Reexamination Certificate

active

07745273

ABSTRACT:
A method for manufacturing a semiconductor device. The method includes providing a semiconductor body of a conductivity type, wherein the semiconductor body comprises a first surface. At least one buried region of a second conductivity type is formed in the semiconductor body and at least a surface region of the second conductivity type is formed at the first surface of the semiconductor body, wherein the buried region and the surface region are formed such that they are spaced apart from each other. The buried region is formed by deep implantation of a first dopant of the second conductivity type.

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