Semiconductor device and method for forming same

Details Semiconductor device and method for forming same Semiconductor device and method for forming same

2008-03-03

2010-11-16

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21626, C257SE21640

Reexamination Certificate

active

07833862

ABSTRACT:
A semiconductor device and method. One embodiments provides a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material, a field electrode formed in lower portion of the trench, a cover comprising a second material above the field electrode, the second material being selectively etchable to the first isolating material, a gate dielectric on the sidewall in an upper portion of the trench and a gate electrode in the upper portion of the trench.

REFERENCES:
patent: 5126807 (1992-06-01), Baba et al.
patent: 5326711 (1994-07-01), Malhi
patent: 2006/0281249 (2006-12-01), Yilmaz et al.
patent: 2007/0114600 (2007-05-01), Hirler et al.
patent: 2009/0050959 (2009-02-01), Madson
patent: 10234996 (2003-10-01), None
patent: 202004021352 (2007-08-01), None

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