Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2011-04-26

2011-04-26

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S217000, C438S275000, C257SE21443, C257SE21618, C257S021000, C257SE21625, C257SE21633, C257SE21634, C257SE21639

Reexamination Certificate

active

07932153

ABSTRACT:
A threshold control layer of a second MIS transistor is formed under the same conditions for forming a threshold control layer of a first MIS transistor. LLD regions of the second MIS transistor are formed under the same conditions for forming LDD regions of a third transistor.

REFERENCES:
patent: 6143594 (2000-11-01), Tsao et al.
patent: 6667524 (2003-12-01), Sakakibara
patent: 6900088 (2005-05-01), Nanjo et al.
patent: 2008/0105923 (2008-05-01), Sakai et al.
patent: 2000-311950 (2000-11-01), None
patent: 2002-334938 (2002-11-01), None
patent: 2003-017582 (2003-01-01), None
patent: 2003-051552 (2003-02-01), None
patent: 2004-111440 (2004-04-01), None
patent: 2004-221223 (2004-08-01), None
Japanese Office Action, with English Translation, issued in Japanese Patent Application No. 2005-352177, mailed Feb. 1, 2011.

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