Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

1997-10-09

2000-04-25

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438373, 438515, 257411, 257405, H01L 21425

Patent

active

060543574

ABSTRACT:
A semiconductor device having a structure including no LDD region while being structured in such a manner that fixed charges are charged in portions of a gate oxide film overlapping with side walls of a gate electrode formed on the gate oxide film so as to reduce the intensity of electric field between the source and drain of a transistor included in the semiconductor device. The charged-up positive or negative fixed charges serve to invert the conductivity of the channel region portion of a semiconductor substrate on which the gate oxide film is formed, thereby providing the same effect as the LDD region. The invention also provides a method for fabricating the semiconductor device.

REFERENCES:
patent: 5345104 (1994-09-01), Prall et al.
patent: 5552332 (1996-09-01), Tseng et al.
patent: 5672525 (1997-09-01), Pan
patent: 5714788 (1998-02-01), Ngaoaram
patent: 5814863 (1998-09-01), Pan

Affiliated with

Also associated with

Rating

Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-992824